View 2n5401 datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401TO-92CBECBEHigh Voltage PNP Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 150 VCollector -Base Voltage VCBO 160 VEmitter -Base Voltage VEBO 5.0 VCollector Current Continuous IC 600 mAPower Dissipation @Ta=25 degC PD 625 mWDerate Above 25 deg C 5.0 mw/deg CPower Dissipation @Tc=25 degC PD 1.5 WDerate Above 25 deg C 12 mw/deg COperating And Storage Junction Tj, Tstg -55 to +150 deg CTemperature RangeTHERMAL RESISTANCEJunction to Case Rth(j-c) 83.3 deg C/WJunction to Ambient Rth(j-a) 200 deg C/WELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

Keywords - ALL TRANSISTORS DATASHEET

 2n5401.pdf Design, MOSFET, Power

 2n5401.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5401.pdf Database, Innovation, IC, Electricity