All Transistors. Datasheet

 

View 2n5401 datasheet:

2n54012n5401

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 VIC= -100A, IE=0 Collector-emitter breakdown vo

 

Keywords - ALL TRANSISTORS DATASHEET

 2n5401.pdf Design, MOSFET, Power

 2n5401.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5401.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.