View 2n5401s datasheet:

SEMICONDUCTOR2N5401STECHNICAL DATAHigh Voltage TransistorFEATURE3We declare that the material of product compliance with RoHS requirements.21DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping SOT232N5401S 2L 3000/Tape&ReelMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CBO 160 VdcEmitterBase Voltage V EBO 5.0 Vdc1Collector Current Continuous I C 500 mAdcBASETHERMAL CHARACTERISTICS2Characteristic Symbol Max UnitEMITTERTotal Device Dissipation FR- 5 Board (1) P D 225 mW T A =25 CDerate above 25C 1.8 mW/CThermal Resistance, Junction to Ambient R 556 C/WJATotal Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25CDerate above 25C 2.4 mW/CThermal Resistance, Junction to Ambient R 417

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