View 2n5401s datasheet:

SEMICONDUCTOR 2N5401STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERS_FEATURES A 2.93 0.20+B 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX23 D 0.40+0.15/-0.05: VCBO=-160V, VCEO=-150VE 2.40+0.30/-0.201Low Leakage Current. G 1.90H 0.95: ICBO=-50nA(Max.) @VCB=-120VJ 0.13+0.10/-0.05K 0.00 ~ 0.10QLow Saturation VoltageL 0.55P PM 0.20 MIN: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mAN 1.00+0.20/-0.10Low Noise : NF=8dB (Max.) P 7Q 0.1 MAXM1. EMITTER2. BASEMAXIMUM RATING (Ta=25)3. COLLECTORCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage -160 VVCEOCollector-Emitter Voltage -150 VSOT-23VEBOEmitter-Base Voltage -5 VICCollector Current -600 mAIBBase Current -100 mAPC *Collector Power Dissipation 3

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