View 2n5666s datasheet:

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN2N5665 2N5666S 2N5667S JANTX2N5666U3 JANTVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N5664 2N5665 Parameters / Test Conditions Symbol Unit 2N5666, S 2N5667, S Collector-Emitter Voltage VCEO 200 300 VdcCollector-Base Voltage VCBO 250 400 VdcTO-66 (TO-213AA) Emitter-Base Voltage VEBO 6.0 Vdc2N5664, 2N5665 Base Current IB 1.0 AdcCollector Current IC 5.0 Adc2N5664 2N5666, S 2N5666U3 2N5665 2N5667, S Total 1/ @ TA = +25C 2.5 1.2 1.5 PT W Power Dissipation @ TC = +100C 30 15 35 Operating & Storage Junction TJ, Tstg -65 to +200 C TO-5 Temperature Range

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