View 2n6053 2n6054 datasheet:

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6055;2N6056 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N6053 -60VCBO Collector-base voltage Open emitter V 2N6054 -80 2N6053 -60VCEO Collector-emitter voltage Open base V 2N6054 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A ICM Collector current-peak -16 A IB Base current -120 mAPD Total Power Dissipation TC=25 100 W Junction temperature 200 Tj Storage temperature -65~200 Tst

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