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View 2n6768 irf350 datasheet:

2n6768_irf3502n6768_irf350

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design achieves: very low on-state resis-TO-3tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.The HEXFET transistors also feature all of the well estab-Features:lished advantages of MOSFETs such as voltage control, Repetitive Avalanche Ratingsvery fast switching, ease of paralleling and temperature Dynamic dv/dt Ratingstability of the electrical parameters. Hermetically Sealed

 

Keywords - ALL TRANSISTORS DATASHEET

 2n6768 irf350.pdf Design, MOSFET, Power

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