View 2n696 2n697 datasheet:

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Junction Temperature Range TJ Tstg -65 to +200 C ,THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0TO-5* Thermal Resistance, Junction-to-Case 0.075 C/mW RJC 1) Derate linearly 4.0 mW/0C for T > 250C A2) Derate linearly 13.3 mW/0C for T > 250C C*See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CER Vdc RBE =

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