View 2n7002-g datasheet:

MOSFET2N7002-G (N-Channel)RoHS DeviceFeaturesSOT-23 Power dissipation : 0.35W0.119(3.00)0.110(2.80)DEquivalent Circuit0.056(1.40)0.047(1.20)DG S0.083(2.10)G : Gate 0.066(1.70)0.006(0.15)S : Source 0.002(0.05)GD : Drain0.044(1.10)0.103(2.60)0.035(0.90)0.086(2.20)S0.006(0.15)max0.020(0.50)Maximum Ratings (at TA=25C)0.013(0.35)Symbol 0.007(0.20)minParameter Value UnitDrain-Source voltage VDS 60 VDrain current ID 250 mAPower dissipation PD 350 mW Dimensions in inches and (millimeter)Junction and storage temperature TJ, TSTG -55 ~ +150 CElectrical Characteristics (at TA=25C unless otherwise noted)SymbolParameter Conditions Min Typ Max UnitDrain-Source breakdown voltage VGS=0V, ID=10A V(BR)DSS 60 70 VGate-Threshold voltage VDS=VGS, ID=250A Vth(GS) 1 1.5 2.5Gate-body leakage VDS=0V, VGS=15V IGSS 10 nA

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