View 2n7002 datasheet:

2N7002MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-Features60V/0.2A, RDS(ON) = 7.5(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7.5(MAX) @VGS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. MAXIMUM RANTINGSParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 V Drain Current-Continuous ID 0.2 AP o w er Dissip atio n PD0.225W 556T herm al R esistance f ro m J unction to Am b ient /W RJAJ unctio n T em p eratureTJ 150TstgSto rage T em p erature -50~+150Electrical Characteristics Parameter Symbol Test Conditions Min Typ. Max UnitsOff Characteristics Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250A 60 - - VZero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A nAGat

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