View 2n7002 sot-23 datasheet:

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET(N-Channel) FEATURES High density cell design for low RDS(ON) Voltage cotrolled small signal switch Rugged and reliable High saturation current capability MARKING:7002 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain current 115 mA PD Power Dissipation 225 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITDrain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 VGate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 1 1.7 2.5

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