All Transistors. Datasheet

 

View 2n7002c1a 2n7002c1b datasheet:

2n7002c1a_2n7002c1b2n7002c1a_2n7002c1b

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 60V VGS Gate Source Voltage 40V ID TC = 25C Continuous Drain Current 115mA ID TC = 100C Continuous Drain Current 75mA IDM Pulsed Drain Current (1) 800mA PT TA 25C Total Power Dissipation at 350mW De-rate TC > 25C 2.8mW/C TJ Operating Temperature Range -55 to +150C Tstg Storage Temperature Range -55 to +150C THERMAL PROPERTIES Symbols Parameters Max Units RJA Thermal Resistance, Junction To Ambient 357 C/W Notes NotesNotes

 

Keywords - ALL TRANSISTORS DATASHEET

 2n7002c1a 2n7002c1b.pdf Design, MOSFET, Power

 2n7002c1a 2n7002c1b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002c1a 2n7002c1b.pdf Database, Innovation, IC, Electricity

 

 
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