View 2n7002e-3 datasheet:

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002ESOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage1 2+0.02Low Input Capacitance +0.10.15 -0.020.95 -0.1+0.11.9 -0.2Fast Switching SpeedLow Input/Output Leakage1.Base1 GATE2.Emitter2 SOURCE3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol Rating UnitDrain-Source Voltage VDS 60Drain-Gate Voltage RGS1.0M VDGR 60VGate-Source Voltage -Continuous 20VGS -Pulsed 40Continuous Drain Current ID 240 mAPower Dissipation PD 300 mWThermal Resistance.Junction- to-Ambient RthJA 417 /WJunction Temperature TJ 150Junction and Storage Temperature Range Tstg -55 to 150Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max UnitDrain-Source Breakdown Voltage VDSS VGS = 0V, ID = 10

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