View 2n7002k datasheet:

January 20122N7002KN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101DSGSOT-23Marking : 7KAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 60 VVDGR Drain-Gate Voltage RGS 1.0M 60 VVGSS Gate-Source Voltage 20 VID Drain Current Continuous 300mA Pulsed 800TJ Operating Junction Temperature Range -55 to +150 CTSTG Storage Temperature Range -55 to +150 C* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.Thermal Charact

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