View 2n7002k datasheet:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N7002KN-Channel High Density Trench MOSFET (60V, 0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (ohm) Max 3 @ VGS = 10V, ID=0.5A 60V 0.5A 5 @ VGS = 5V, ID=0.05A Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV 2N7002K Pin Assignment & Symbol 3 3-Lead Plastic SOT-23 2 1 Pin 1: Gate 2: Source 3: Drain Absolute Maximum Ratings (T =25oC, unless otherwise noted) ASymbol Parameter Ratings Units V Drain-Source Voltage 60 V DSV Gate-Source Voltage 20 V GSI Drain Current a 0.5 A DI Drain Current (Pulsed) b 0.8 A DMP Total Power Dissipation @T =25oC a 0.35 W D AT , T Operating Junction and Storage Temperature Range -55 to +150 C j stgRq Thermal Resistance Junction to Ambient (PCB mounted) 357 C

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