View 2n7002t datasheet:

2N7002TN-Channel MOSFETSOT-523 Plastic-Encapsulate MOSFETSID V(BR)DSS RDS(on)MAX SOT-523 1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability M Equivalent Circuit MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVDS Drain-Source voltage 60 V VGS ID Drain Current 115 mA PD Power Dissipation 150 mW R JA 833 Thermal Resistance from Junction to Ambient TJ Junction Temperature 150 Tstg Storage Temperature -55~+150 http:

Keywords - ALL TRANSISTORS DATASHEET

 2n7002t.pdf Design, MOSFET, Power

 2n7002t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002t.pdf Database, Innovation, IC, Electricity