View 2n7002w datasheet:

February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking : 2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 60 VVDGR Drain-Gate Voltage RGS 1.0M 60 VVGSS Gate-Source Voltage Continuous 20VPulsed 40ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800TJ , TSTG Junction and Storage Temperature Range -55 to +150 C* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.Thermal CharacteristicsSymbol Parameter Value UnitsPD Total Device Dissipation 200 mW

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