All Transistors. Datasheet

 

View 2n7002x datasheet:

2n7002x

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS SOT-89-3L 2N7002X MOSFET( N-Channel ) 1 1 2 FEA TURES 2 33 High density cell design for low RDS(on) 1.GATE Voltage controlled small signal switch 2. DRAIN Rugged and reliable 3. SOURCE High saturation current capability MARKING:K72 MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 60 V ID Drain Current 115 mA PD Power Dissipation 500 mW TJ Junction Temperature 150 TSTG Storage Temperature -55~+150 RJA Thermal Resistance from Junction to Ambient /W 250 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitDrain-source breakdown voltage V(BR)DSS VGS=0V,ID=250A 60 V Gate-threshold voltage* V(GS)th

 

Keywords - ALL TRANSISTORS DATASHEET

 2n7002x.pdf Design, MOSFET, Power

 2n7002x.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002x.pdf Database, Innovation, IC, Electricity

 

 
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