View 2n7002x datasheet:
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS SOT-89-3L 2N7002X MOSFET( N-Channel ) 1 1 2 FEA TURES 2 33 High density cell design for low RDS(on) 1.GATE Voltage controlled small signal switch 2. DRAIN Rugged and reliable 3. SOURCE High saturation current capability MARKING:K72 MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 60 V ID Drain Current 115 mA PD Power Dissipation 500 mW TJ Junction Temperature 150 TSTG Storage Temperature -55~+150 RJA Thermal Resistance from Junction to Ambient /W 250 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitDrain-source breakdown voltage V(BR)DSS VGS=0V,ID=250A 60 V Gate-threshold voltage* V(GS)th
Keywords - ALL TRANSISTORS DATASHEET
2n7002x.pdf Design, MOSFET, Power
2n7002x.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n7002x.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet