View 2sa1010 datasheet:

isc Silicon PNP Power Transistor 2SA1010DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SC2334Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency power am-plifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100 VCEOV Emitter-Base Voltage -7.0 VEBOI Collector Current-Continuous -7.0 ACI Collector Current-Peak -15 ACMI Base Current-Continuous -3.5 ABCollector Power Dissipation1.5@ T =25aP WCCollector Power Dissipation40@ T =25CT Junction Temperature 150 JStorage Temperature Range

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