View 2sa1010 datasheet:

DATA SHEETSILICON POWER TRANSISTOR2SA1010PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use as a driver indevices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.FEATURES Low collector saturation voltage Fast switching speed Complementary transistor: 2SC2334ABSOLUTE MAXIMUM RATINGS (Ta = 25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO -100 VCollector to emitter voltage VCEO -100 VPin ConnectionEmitter to base voltage VEBO -7.0 VCollector current (DC) IC(DC) -7.0 ACollector current (pulse) IC(pulse)* -15 ABase current (DC) IB(DC) -3.5 ATotal power dissipation PT (Tc = 25 C) 40 WTotal power dissipation PT (Ta = 25

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