View 2sa1011 datasheet:

sc Silicon PNP Power Transistor 2SA1011DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Typ.)@ I = -0.5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOComplement to Type 2SC2344Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, audio frequency poweramplifiers, 100W output predriver applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Voltage -160 VCEOV Emitter-Base Voltage -6 VEBOI Collector Current-Continuous -1.5 ACI Collector Current-Peak -3.0 ACMP Total Power Dissipation@ T =25 25 WC CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc website www.iscsemi.com isc & iscsemi is registered trademar

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