View 2sa1012-d datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1012-DDESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -3ACE(sat) CHigh Switching Speed TO-252 Package-D=Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOPARAMETER VALUE UNITLV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -5 ACTotal Power DissipationP 20 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNITV Collector-Emitter Breakdown Voltage I = -10mA ; I = 0 -50 V(B

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