View 2sa1012 datasheet:

isc Silicon PNP Power Transistor 2SA1012DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC2562100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -5 ACTotal Power DissipationP 20 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1012ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCS

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