View 2sa1012 datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES High Current Switching Applications. Low Collector Saturation Voltage High Speed Swithing Time 1. BASE 2. COLLECTOR3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 1.25 WThermal Resistance Junction /W 100Ambient to Tj Junction Temperature 150 Tstg Storage Temperature Range -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =-0.1mA, IE=0 -60 VCol

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