View 2sa1013 datasheet:

INCHANGE Semiconductorisc Silicon PNP Transistor 2SA1013DESCRIPTIONHigh Voltage and High CurrentVceo=-160V(Min.Excellent hFE LinearityLow NoiseComplement to Type 2SC2383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Collector-Emitter Voltage -160 VCEOV Emitter-Base Voltage -6 VEBOI Collector Curren -1 ACI Base Curren -500 mABCollector Power DissipationP 900 mWC@T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc website www.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Transistor 2SA1013ELECTRICAL CHARACTER

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