View 2sa1015-l 2sa1015-h datasheet:

2SC1015PNP Transistors321.BaseFeatures 2.Emitter1 3.CollectorHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23)Low niose: NF=1dB(Typ.) at f=1KHzAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -150 mACollector Power Dissipation PC 200 mWJunction Temperature TJ 150Storage Temperature Tstg -55 to 150Electrical Characteristics Ta = 25Parameter Symbol Testconditions Min Typ Max UnitCollector-base breakdown voltage VCBO -100 A, IE=0 -50 VIc=Collector-emitter breakdown voltage VCEO Ic= -0.1mA, IB=0 -50 VEmitter-base breakdown voltage VEBO -100 A, IC=0 -5 VIE=Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 ACollector cut-off current ICEO VCE= -50V , IB=

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