View 2sa1015 datasheet:

`isc Silicon PNP Transistor 2SA1015DESCRIPTIONHigh Voltage and High CurrentVceo=-50V(Min.Ic=-150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SC1815Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5 VEBOI Collector Curren -150 mACI Base Curren -50 mABCollector Power DissipationP 400 mWC@T =25CT Junction Temperature 125 JStorage Temperature Range -55~125 Tstg1isc website www.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Transistor 2SA1015ELECTRICAL CHARACTERIS

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