View 2sa1015 datasheet:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 VCollector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50

Keywords - ALL TRANSISTORS DATASHEET

 2sa1015.pdf Design, MOSFET, Power

 2sa1015.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1015.pdf Database, Innovation, IC, Electricity