View 2sa1015l datasheet:

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 0.2dB (typ.) (f = 1 kHz) Complementary to 2SC1815 (L) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mAJEDEC TO-92Base current IB -50 mAJEITA SC-43Collector power dissipation PC 400 mWTOSHIBA 2-5F1BJunction temperature Tj 125 CStorage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Elect

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