View 2sa1015lt1 datasheet:

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3Emitter-Base Voltage Vebo -5 V STYLE Collector Current Ic -150 mA NO.1 B E CCollector Dissipation Ta=25* PD 225 mWJunction Temperature Tj 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Unit Test ConditionsCollector-Base Breakdown Voltage BVcbo -60 V Ic= -100uA Ie=0 Collector-Emitter Breakdown Voltage# BVceo -50 V Ic= -1mA Ib=0 Emitter-Base Breakdown Voltage BVebo -5.0 V Ie= -100uA Ic=0 Collector-Base Cutoff Current Icbo -100 nA Vc

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