View 2sa1018 datasheet:

Transistor2SA1018Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC14735.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 V+0.2 +0.2Collector to emitter voltage VCEO 200 V 0.45 0.1 0.45 0.11.27 1.27Emitter to base voltage VEBO 5 VPeak collector current ICP 100 mACollector current IC 70 mA1 2 31:EmitterCollector power dissipation PC 750 mW 2:Collector3:Base2.54 0.15Junction temperature Tj 150 CJEDEC:TO92Storage temperature Tstg 55 ~ +150 C EIAJ:SC43AElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector cutoff current ICEO VCE = 120V, IB = 0, Ta = 60C 1 ACollector to emitter voltage VCEO IC = 100

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