View 2sa1091 datasheet:

2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.) Complementary to 2SC2551. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -300 VCollector-emitter voltage VCEO -300 VEmitter-base voltage VEBO -8 VCollector current IC -100 mABase current IB -20 mAJEDEC TO-92Collector power dissipation PC 400 mWJEITA SC-43Junction temperature Tj 150 CTOSHIBA 2-5F1BStorage temperature range Tstg -55~150 CWeight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g

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