View 2sa1094 datasheet:

isc Silicon PNP Power Transistor 2SA1094DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2564Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 80W high-fidelity audio frequencyamplifier output stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -140 VCBOV Collector-Emitter Voltage -140 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -12 ACI Emitter Current-Continuous 12 AECollector Power DissipationP 120 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1094

Keywords - ALL TRANSISTORS DATASHEET

 2sa1094.pdf Design, MOSFET, Power

 2sa1094.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1094.pdf Database, Innovation, IC, Electricity