View 2sa1095 datasheet:

isc Silicon PNP Power Transistor 2SA1095DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 100W high-fidelity audio frequencyamplifier output stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Collector-Emitter Voltage -160 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -15 ACI Emitter Current-Continuous 15 AECollector Power DissipationP 150 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA109

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