View 2sa1096 datasheet:

isc Silicon PNP Power Transistor 2SA1096DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -2 ACI Collector Current-Peak -3 ACMCollector Power Dissipation1.2@ T =25aP WCTotal Power Dissipation5@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1096ELECTRICAL CHARAC

Keywords - ALL TRANSISTORS DATASHEET

 2sa1096.pdf Design, MOSFET, Power

 2sa1096.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1096.pdf Database, Innovation, IC, Electricity