View 2sa1096a datasheet:

isc Silicon PNP Power Transistor 2SA1096ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -2 ACI Collector Current-Peak -3 ACMCollector Power Dissipation1.2@ T =25aP WCTotal Power Dissipation5@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1096AELECTRICAL CH

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