View 2sa1105 datasheet:

isc Silicon PNP Power Transistor 2SA1105DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -6 VEBOI Collector Current-Continuous -9 ACCollector Power DissipationP 90 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1105ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN

Keywords - ALL TRANSISTORS DATASHEET

 2sa1105.pdf Design, MOSFET, Power

 2sa1105.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1105.pdf Database, Innovation, IC, Electricity