View 2sa1106 datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1106DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SC2581Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -140 VCBOV Collector-Emitter Voltage -140 VCEOV Emitter-Base Voltage -6 VEBOI Collector Current-Continuous -10 ACI Base Current-Continuous -4 ABCollector Power DissipationP 100 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon PNP Power

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