View 2sa1106 datasheet:

JMnic Product Specification Silicon PNP Power Transistors 2SA1106 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -10 A PC Collector power dissipation TC=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 JMnic Product Specification Silicon PNP Power Transistors 2SA1106 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

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