All Transistors. Datasheet

 

View 2sa1106 datasheet:

2sa1106

2SA1106 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2581ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Collector Dissipation PC 100 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 CELECTRICAL CHARACTERISTICS (Ta=25CC)CC Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=-5 mA IE=0 -200 V Collector Emitter Breakdown Voltage BVCEO IC=-10 mA -140 V Emitter Base Breakdown Voltage BVEBO RBE= -6 V Collector Cutoff Current ICBO IE=-5mA IC=0 -0.1 mA Emitter Cutoff Current IEBO VCB=-100V IE=0 -0.1 mA*DC Curre

 

Keywords - ALL TRANSISTORS DATASHEET

 2sa1106.pdf Design, MOSFET, Power

 2sa1106.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1106.pdf Database, Innovation, IC, Electricity

 

 
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