View 2sa1106 datasheet:
2SA1106 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2581ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Collector Dissipation PC 100 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 CELECTRICAL CHARACTERISTICS (Ta=25CC)CC Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=-5 mA IE=0 -200 V Collector Emitter Breakdown Voltage BVCEO IC=-10 mA -140 V Emitter Base Breakdown Voltage BVEBO RBE= -6 V Collector Cutoff Current ICBO IE=-5mA IC=0 -0.1 mA Emitter Cutoff Current IEBO VCB=-100V IE=0 -0.1 mA*DC Curre
Keywords - ALL TRANSISTORS DATASHEET
2sa1106.pdf Design, MOSFET, Power
2sa1106.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sa1106.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet