View 2sa1108 datasheet:

isc Silicon PNP Power Transistor 2SA1108DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -130V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-Emitter Voltage -130 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -12 ACCollector Power DissipationP 120 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1108ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TY

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