All Transistors. Datasheet

 

View 2sa1213 datasheet:

2sa12132sa1213

SMD Type TransistorsPNP Transistors 2SA12131.70 0.1FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)High Speed Switching Time: tstg = 1.0us (typ.)Small Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28731.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -2A Base Current - Continuous IB -0.4 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -10 mA

 

Keywords - ALL TRANSISTORS DATASHEET

 2sa1213.pdf Design, MOSFET, Power

 2sa1213.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1213.pdf Database, Innovation, IC, Electricity

 

 
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