View 2sa1213o-g datasheet:
General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless otherwise noted)0.020(0.52) 0.023(0.58)Symbol 0.013(0.32) 0.016(0.40)Parameter Value UnitCollector-Base voltage 0.060(1.50) VCBO -50 VTYP.Collector-Emitter voltage 0.118(3.00)VCEO -50 VTYP.Emitter-Base voltageVEBO -5 V0.063(1.60)Continuous current IC -2 A0.055(1.40)Collector power dissipationPC 500 mWThermal resistance fromRJA 250 C/W 0.017(0.44)0.047(1.20)junction to ambient0.014(0.35)0.035(0.90)Junction temperature TJ 150 CDimensions in inches
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2sa1213o-g.pdf Design, MOSFET, Power
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