View 2sa1220 2sa1220a datasheet:

isc Silicon PNP Power Transistors 2SA1220/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)-2SA1220(BR)CEO= -160V(Min)-2SA1220AComplement to Type 2SC2690/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT2SA1220 -120V Collector-Base Voltage VCBO2SA1220A -1602SA1220 -120V Collector-Emitter Voltage VCEO2SA1220A -160V Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -1.2 ACI Collector Current-Peak -2.5 ACMI Base Current-Continuous -0.3 ABCollector Power Dissipation1.2@ T =25aP WCTotal Power Dissipation20@ T =25CT Junction Temperature 150 JT Storage Temperature Range

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