View 2sa1579 datasheet:

SMD Type TransistorsPNP Transistors2SA1579 Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Dissipation PC 100 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -50 A IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mAIB=0 -120 V Emitter - base breakdown voltage VEBO IE= -50A IC=0 -5 Collector-base cut-off current ICBO VCB= -100 V , IE=0 -0.5 uA Emitter cut-off current

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