All Transistors. Datasheet

 

View 2sa1832 datasheet:

2sa18322sa1832

2SA1832PNP TRANSISTOR3P b Lead(Pb)-Free12FEATURES:* High voltage and high current* Excellent hFE linearitySOT-523(SC-75)* Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBOCollector-Base Voltage -50 V VCEOCollector-Emitter Voltage -50 V VEBOEmitter-Base Voltage -5 V ICCollector Current Continuous -150 mAPDTotal Device Dissipation 100 mWRJAThermal Resistance Junction to Ambient /W125TJJunction Temperature -55 to +125 Tstg -55 to +125Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC=-100A,IE=0 -50 V Collector-emitter breakdown voltage VCEO* IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage VEBO IE=-100A,IC=0 -5 V C

 

Keywords - ALL TRANSISTORS DATASHEET

 2sa1832.pdf Design, MOSFET, Power

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