View 2sa1836 datasheet:

DATA SHEETPNP SILICON EPITAXIAL TRANSISTOR2SA1836PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.3 +0.1 0.15+0.10 0.05FEATURES High DC current gain: hFE2 = 200 TYP. 30 to 0.1 High voltage: VCEO = -50 V Can be automatically mounted 2 10.2+0.10ORDERING INFORMATION 0.60.5 0.50.75 0.051.0PART NUMBER PACKAGE 1.6 0.11: Emitter2SA1836 SC-75 (USM)2: Base3: CollectorABSOLUTE MAXIMUM RATINGS (TA = 25C) Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5.0 V Collector Current (DC) IC(DC) -100 mA IC(pulse) -200 mA Collector Current (pulse) Note1 PT 200 mWTotal Power Dissipation Note2 Junction Temperature Tj 150 CStorage Temperature Range Tstg 55 to + 150 C

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