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View 2sa1930 datasheet:

2sa19302sa1930

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -180 VCollector-emitter voltage VCEO -180 VEmitter-base voltage VEBO -5 VCollector current IC -2 ABase current IB -1 ATa = 25C 2.0 Collector power PC W dissipation Tc = 25C 20 JEDEC Junction temperature Tj 150 CJEITA SC-67Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1ANote: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi

 

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