View 2sa1941r 2sa1941o datasheet:

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VCollector-emitter voltage VCEO -140 VEmitter-base voltage VEBO -5 VCollector current IC -10 ABase current IB -1 ACollector power dissipation PC 100 W JEDEC (Tc = 25C) JEITA Junction temperature Tj 150 CTOSHIBA 2-16C1AStorage temperature range Tstg -55 to 150 C Weight: 4.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decre

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