View 2sa1943 datasheet:

isc Silicon PNP Power Transistor 2SA1943DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V =- 230V(Min)(BR)CEOComplement to Type 2SC5200Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -230 VCBOV Collector-Emitter Voltage -230 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -15 ACI Base Current-Continuous -1.5 ABCollector Power DissipationP 150 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc website www.iscsemi.com isc & iscsemi is registered trademark

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